200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.2A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.28Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

200V LOGIC N-Channel MOSFET

ONSEMI

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200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：606.86 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：694.93 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET 200 V, 9 A, 280 m

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：862.5 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体