600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：555.07 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

ONSEMI

安森美半导体

N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Power MOSFET (600V,12A)

Features • H10N60F is a High voltage NChannel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology • Advanced termination scheme to provide enhanced voltageblocking capability • Avalanche Energy Specified • Source to Drain Diode Recovery Time Co

文件：156.36 Kbytes 页数：4 Pages

HSMC

华昕

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：614.17 Kbytes 页数：6 Pages

Huashan

华汕电子器件