500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：927.75 Kbytes 页数：10 Pages

Fairchild

仙童半导体

MOSFET N-CH 500V 13A TO-220F

ONSEMI

安森美半导体

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：1.28318 Mbytes 页数：10 Pages

Fairchild

仙童半导体

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy

文件：1.20903 Mbytes 页数：6 Pages

GREATPOWER

冠顺微电子

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：506.34 Kbytes 页数：6 Pages

Huashan

华汕电子器件