POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy

文件：1.20903 Mbytes 页数：6 Pages

GREATPOWER

冠顺微电子

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy

文件：1.20903 Mbytes 页数：6 Pages

GREATPOWER

冠顺微电子

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：506.34 Kbytes 页数：6 Pages

Huashan

华汕电子器件

500V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 38 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V ❐

文件：946.97 Kbytes 页数：8 Pages

SEMIHOW

Superior Avalanche Rugged Technology

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 34 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.39 Ω (Typ.) @vGS=10V ❐

文件：169.33 Kbytes 页数：8 Pages

SEMIHOW