| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GPT13N50D | POWER FIELD EFFECT TRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy | GREATPOWERGreatpower Microelectronic Corp. 冠顺微电子深圳冠顺微电子有限公司 | GREATPOWER | |
POWER FIELD EFFECT TRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy | GREATPOWERGreatpower Microelectronic Corp. 冠顺微电子深圳冠顺微电子有限公司 | GREATPOWER | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
500VN-ChannelMOSFET FEATURES ❐OriginativeNewDesign ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐UnrivalledGateCharge:38nC(Typ.) ❐ExtendedSafeOperatingArea ❐LowerRDS(ON):0.39Ω(Typ.)@VGS=10V ❐ | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology FEATURES ❐OriginativeNewDesign ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐UnrivalledGateCharge:34nC(Typ.) ❐ExtendedSafeOperatingArea ❐LowerRDS(ON):0.39Ω(Typ.)@vGS=10V ❐ | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
siliconN-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CHAMPION |
1650+ |
TO-220F |
7500 |
只做原装进口,假一罚十 |
询价 | ||
CHAMPION |
25+23+ |
TO-220F |
34702 |
绝对原装正品全新进口深圳现货 |
询价 | ||
CHAMPION |
20+ |
TO-220F |
32500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
CHAMPION |
22+ |
TO-220F |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
GPT |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CHAMPION |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-220F |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
CHAMPION |
25+ |
TO-220F |
21000 |
原厂原装,价格优势!13246658303 |
询价 | ||
CHAMPION |
24+ |
NA/ |
4350 |
原装现货,当天可交货,原型号开票 |
询价 | ||
CHAMPION |
23+ |
1401+ |
6500 |
专注配单,只做原装进口现货 |
询价 |
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相关库存
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- GPTC2V540SHMRGT001
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- GPTC3V340MHERGT003
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- GPTC3V340MHSRGT001
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- GPTC3V340PHMRGT002
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- GPTC5V030MHERGT001
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- GPTC5V030MHSRGT001
- GPTC5V030PHERGT001
- GPTC5V030PHERGT003
- GPTC5V030PHMRGT002
- GPTC5V030PHSRGT001
- GPTC5V030SHERGT001
- GPTC5V030SHERGT003
- GPTC5V030SHMRGT002
- GPTC5V030SHSRGT001
