GPT13N50D中文资料冠顺微电子数据手册PDF规格书

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

Ciss improvement