400V N-Channel MOSFET

Features • 1.6A, 400V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 6.0 nC) • Low Crss ( typical 4.2 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

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Fairchild

仙童半导体

400V N-Channel MOSFET

ONSEMI

安森美半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

I-PAK Tube Packing Configuration

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Fairchild

仙童半导体