100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：552.68 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.42 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：638.64 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：642.25 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

PROSLIC® SINGLE-CHIP FXS SOLUTION WITH INTEGRATED SERIAL INTERFACE (ISI)

Si32172/3/5 Features  Complete FXS solution in 5 x 7 mm  3-wire ISI combines PCM, SPI, and interrupt data  Performs all BORSCHT functions  Ideal for short to medium loops  Global programmability  Internal balanced or unbalanced ringing  Patented low power ringing  Simplified conf

文件：616.03 Kbytes 页数：46 Pages

SKYWORKS

思佳讯