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FQT1N60C

N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor® ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT1N60CTF-WS

N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor® ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

LittelfuseLittelfuse Inc.

力特力特公司

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60

600VN-ChannelMOSFET

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRONWEITRON

威堂電子科技

1N60

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1N60

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

1.2Amps,600/650VoltsN-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&

MCCMicro Commercial Components

美微科美微科半导体公司

1N60

Lowforwardvoltagedrop-lowpowerconsumption

FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N60

45VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60

SMALLSIGNALSCHOTTKYDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

详细参数

  • 型号:

    FQT1N60C

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

供应商型号品牌批号封装库存备注价格
FAIRCHILD
19+
SOT-223
17585
询价
ON/安森美
20+
SOT-223
120000
原装正品 可含税交易
询价
ON/安森美
SOT223
7906200
询价
FAIRCHILD
360000
原厂原装
1305
询价
FSC
2017+
SOT-223
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHILD
24+
SOT-223
5000
全现原装公司现货
询价
FAIRCHILD
19+
SOT-223
71843
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
FSC进口原
22+23+
SOT-223
23240
绝对原装正品全新进口深圳现货
询价
FAIRCHI
21+
SOT-223
12588
原装正品,自己库存 假一罚十
询价
FSC进口原
19+
SOT-223
9860
一级代理
询价
更多FQT1N60C供应商 更新时间2024-5-24 13:30:00