N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor® ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance

文件：1.04346 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor® ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance

文件：1.04346 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •0.2A, 600V, RDS(on)= 9.3Ω（典型值）@VGS = 10 V, ID = 0.1A栅极电荷低（典型值：4.8nC）\n•低 Crss（典型值3.5pF）\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche •0.2A, 600V, RDS(on)= 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A\n• .\n•Low gate charge ( Typ. 4.8nC)\n•Low Crss ( Typ. 3.5pF)\n•100% avalanche tested\n•RoHS compliant;

ONSEMI

安森美半导体