N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor® ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche •0.2A, 600V, RDS(on)= 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A\n• .\n•Low gate charge ( Typ. 4.8nC)\n•Low Crss ( Typ. 3.5pF)\n•100% avalanche tested\n•RoHS compliant;

ONSEMI

安森美半导体

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件：543.8 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

文件：549.28 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：640.5 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司