100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：548.81 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：998.7 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100 V (D-S) MOSFET

文件：1.01324 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：998.7 Kbytes 页数：10 Pages

Fairchild

仙童半导体

100V LOGIC N-Channel MOSFET

文件：635.93 Kbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，10 A，180 mΩ，IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •10A, 100V, RDS(on)= 180mΩ（最大值）@VGS = 10 V, ID = 5A栅极电荷低（典型值：9.5nC)\n•低 Crss（典型值35pF)\n•100% 经过雪崩击穿测试\n• 100% Avalanche Tested\n• Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers;

ONSEMI

安森美半导体