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FQT7N10L

PROSLIC® SINGLE-CHIP FXS SOLUTION WITH INTEGRATED SERIAL INTERFACE (ISI)

Si32172/3/5 Features  Complete FXS solution in 5 x 7 mm  3-wire ISI combines PCM, SPI, and interrupt data  Performs all BORSCHT functions  Ideal for short to medium loops  Global programmability  Internal balanced or unbalanced ringing  Patented low power ringing  Simplified conf

文件:616.03 Kbytes 页数:46 Pages

SKYWORKS

思佳讯

FQT7N10L

SINGLE-CHIP DUAL PROSLIC®

Si32260/1 Features  Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package  Performs all BORSCHT functions  Ideal for short- or long-loop applications  Ultra low power consumption  Internal balanced or unbalanced ringing  Patented low power ringing  Adaptive ringing  S

文件:1.2334 Mbytes 页数:59 Pages

SKYWORKS

思佳讯

FQT7N10L

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件:642.25 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT7N10LTF

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件:1.06662 Mbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT7N10LTF-TP

N-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件:1.53402 Mbytes 页数:4 Pages

TECHPUBLIC

台舟电子

FQT7N10L

功率 MOSFET,N 沟道,逻辑电平,QFET®,100 V,1.7 A,350 mΩ,SOT-223

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •1.7A, 100V, RDS(on)= 350mΩ(最大值)@VGS = 10 V, ID = 0.85A栅极电荷低(典型值:5.8nC)\n•低 Crss(典型值10pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    100

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    2

  • ID Max (A):

    1.7

  • PD Max (W):

    2

  • RDS(on) Max @ VGS = 10 V(mΩ):

    350

  • Qg Typ @ VGS = 10 V (nC):

    4.6

  • Ciss Typ (pF):

    220

  • Package Type:

    SOT-223-4/TO-261-4

供应商型号品牌批号封装库存备注价格
VBSEMI
19+
SOT223-3
18985
询价
FAIRCHILD/仙童
25+
FAIRCHILD
154459
明嘉莱只做原装正品现货
询价
FAIRCHILD
24+
SOT-223
15800
绝对原装现货,价格低,欢迎询购!
询价
ON/安森美
20+
SOT-223
120000
原装正品 可含税交易
询价
ON/安森美
24+
SOT-223
505268
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
24+
SOT-223-3
8866
询价
FSC
24+
SOT-223
5000
只做原装公司现货
询价
F
23+
SOT223-
8650
受权代理!全新原装现货特价热卖!
询价
FAIRCHILD
18+
SOT-223
41200
原装正品,现货特价
询价
FAIRCHILD
20+
SOT-223
38900
原装优势主营型号-可开原型号增税票
询价
更多FQT7N10L供应商 更新时间2025-10-12 16:04:00