200V N-Channel MOSFET

文件：693.49 Kbytes 页数：8 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.8A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.69Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.6 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.59 Kbytes 页数：2 Pages

ISC

无锡固电

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：547.13 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体