300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.03 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.81 Kbytes 页数：2 Pages

ISC

无锡固电

300V N-Channel MOSFET

ONSEMI

安森美半导体

Power MOSFET

文件：176.03 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：137.03 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：176.03 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技