200V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：627.52 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel QFET짰 MOSFET 200 V, 0.85 A, 1.40 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：2.04983 Mbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V ' b=1.0A @Ves = 10V | Roson) £ 1.35Q @Ves = 10V | SOT-223 package.

文件：3.04984 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，0.85 A，1.4 Ω，SOT-223

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •0.85A, 200V, RDS(on)= 1.35Ω（最大值）@VGS = 10 V, ID = 0.425A栅极电荷低（典型值：4nC)\n•低 Crss（典型值6pF)\n•100% 经过雪崩击穿测试\n•低电平栅极驱动要求允许直接从逻辑驱动运行。\n•Low level gate drive requirments allowingdirect operationfrom logic drives;

ONSEMI

安森美半导体