丝印：4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V ' b=1.0A @Ves = 10V | Roson) £ 1.35Q @Ves = 10V | SOT-223 package.

文件：3.04984 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

200V N-Channel MOSFET

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：701.83 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.68 Kbytes 页数：2 Pages

ISC

无锡固电

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：519.64 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司