400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

I-PAK Tube Packing Configuration

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FAIRCHILD

仙童半导体

I-PAK Tube Packing Configuration

ONSEMI

安森美半导体