MOSFET N-CH 250V 3A IPAK

ONSEMI

安森美半导体

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • El

文件：256.329 Kbytes 页数：3 Pages

KODENSHI

可天士

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • El

文件：256.329 Kbytes 页数：3 Pages

KODENSHI

可天士

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Typ.100 (at IF=5mA, VCE=5V) • Electric

文件：187.37 Kbytes 页数：3 Pages

KODENSHI

可天士