600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：615.09 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.83056 Mbytes 页数：9 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：641.6 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET

文件：1.83056 Mbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.83056 Mbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，QFET®，600 V，2.8 A，2.5 Ω，IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2.8A, 600V, RDS(on)= 2.5Ω（最大值）@VGS = 10 V, ID = 1.4A栅极电荷低（典型值：15nC)\n•低 Crss（典型值6.5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体