500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：628.88 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.15 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

文件：669.57 Kbytes 页数：9 Pages

Fairchild

仙童半导体

丝印：FQU5N50CS；Package：I-PAK；N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω

Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

文件：935.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

分立式 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy • 4.0 A, 500 VrDS(ON) = 1.4 Ω @ VGS = 10 V\n• Low Gate Charge (Typ. 18 nC)\n• Low Crss (Typ. 15 pF)\n• Fast Switching Speed\n• 100% AvalancheTested\n• Improved dv/dt Capability;

ONSEMI

安森美半导体