丝印：FQU5N50CS；Package：I-PAK；N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω

Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

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