250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：602.63 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.2A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.28 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

ONSEMI

安森美半导体

Automotive, DC Motor Control and Class D Amplifier

文件：424.62 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Power MOSFET

文件：1.8963 Mbytes 页数：9 Pages

LEIDITECH

雷卯电子

StarMOST Power MOSFET

文件：201.55 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子