150V N-Channel MOSFET

150V N-Channel MOSFET

文件：757.28 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.2A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.41 Kbytes 页数：2 Pages

ISC

无锡固电

150V N-Channel MOSFET

ONSEMI

安森美半导体

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Sp

文件：231.95 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：345.09 Kbytes 页数：2 Pages

ISC

无锡固电