200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on)= 1.2Ω@VGS= 10 V • Low gate charge ( typical 4.8 nC) • Low Crss ( typical 6.0 pF) • Fast

文件：529.94 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.57 Kbytes 页数：2 Pages

ISC

无锡固电

DC Motor Control and Class D Amplifier

Features · Fast switching · 100% avalanche tested · Improved dv/dt capability · RoHS Compliant Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

文件：3.18561 Mbytes 页数：7 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

文件：447.15 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Power MOSFET

文件：1.15949 Mbytes 页数：7 Pages

HMSEMI

华之美半导体