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FQU5N50

500V N-Channel MOSFET

500V N-Channel MOSFET

文件:772.02 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQU5N50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:329.96 Kbytes 页数:2 Pages

ISC

无锡固电

FQU5N50C

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:330.15 Kbytes 页数:2 Pages

ISC

无锡固电

FQU5N50C

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件:628.88 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQU5N50CTU-WS

丝印:FQU5N50CS;Package:I-PAK;N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω

Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

文件:935.76 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

FQU5N50C

500V N-Channel MOSFET

文件:669.57 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQU5N50C

分立式 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy • 4.0 A, 500 VrDS(ON) = 1.4 Ω @ VGS = 10 V\n• Low Gate Charge (Typ. 18 nC)\n• Low Crss (Typ. 15 pF)\n• Fast Switching Speed\n• 100% AvalancheTested\n• Improved dv/dt Capability;

ONSEMI

安森美半导体

FQU5N50TU

MOSFET N-CH 500V 3.5A IPAK

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    500

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    4

  • PD Max (W):

    48

  • RDS(on) Max @ VGS = 10 V(mΩ):

    1400

  • Qg Typ @ VGS = 10 V (nC):

    18

  • Ciss Typ (pF):

    480

  • Package Type:

    IPAK-3/DPAK-3 STRAIGHT LEAD

供应商型号品牌批号封装库存备注价格
FSC/BYD
2012
TO251
100000
全新原装进口自己库存优势
询价
FSC/BYD
2015+
TO251
19898
专业代理原装现货,特价热卖!
询价
FAIRCHILD
24+
TO-251
8866
询价
仙童
06+
TO-251
5000
原装库存
询价
FAIRCHILD
20+
TO-251
38900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD/仙童
23+
TO-251
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-251(IPAK)
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-251
100000
代理渠道/只做原装/可含税
询价
FAIRCHILD
2023+环保现货
TO-251(IPAK)
20000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
FAIRCHI
23+
TO-251
8560
受权代理!全新原装现货特价热卖!
询价
更多FQU5N50供应商 更新时间2026-1-24 9:31:00