400V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：735.8 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：735.34 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.59 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，QFET®，400 V，3.4 A，1.6 Ω，IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •3.4A, 400V, RDS(on)= 1.6Ω（最大值）@VGS = 10 V, ID = 1.7A栅极电荷低（典型值：10nC）\n•低 Crss（典型值7pF）\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：735.34 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体