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FQPF50N06

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

文件:664.92 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQPF50N06

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:630.28 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQPF50N06

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Switch

文件:315.92 Kbytes 页数:2 Pages

ISC

无锡固电

FQPF50N06

60V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件:138.58 Kbytes 页数:1 Pages

TGS

FQPF50N06

60V N-Channel MOSFET

ONSEMI

安森美半导体

FQPF50N06L

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

文件:664.92 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQPF50N06L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=32.6A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.021Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:277.78 Kbytes 页数:2 Pages

ISC

无锡固电

详细参数

  • 型号:

    FQPF50N06

  • 功能描述:

    MOSFET 60V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
25+
TO-220F
45000
FAIRCHILD/仙童全新现货FQPF50N06即刻询购立享优惠#长期有排单订
询价
FAIRCHILD/仙童
24+
TO-220
3580
原装现货/15年行业经验欢迎询价
询价
FSC/仙童
25+
TO-220F
6500
十七年专营原装现货一手货源,样品免费送
询价
FSC
2015+
TO-220F
16898
专业代理原装现货,特价热卖!
询价
FAIRCHIL..
23+
TO-220
8600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
仙童
05+
TO-220F
1000
原装进口
询价
FSC
6200
TO-220
17
100%原装正品现货
询价
FAIRCHILD
15+
TO-220F
11560
全新原装,现货库存,长期供应
询价
FAIRCHI
25+
TO220F
50
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FSC
2012
TO-220F
900000
全新原装进口自己库存优势
询价
更多FQPF50N06供应商 更新时间2025-12-12 20:04:00