500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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Fairchild

仙童半导体

500V, 5A N-Channel MOSFET

General Description The FQP5N50 & FQPF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabilit

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500V N-Channel MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.45 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：860.85 Kbytes 页数：10 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：657.26 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Low gate charge ( typical 18nC)

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：662.75 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，QFET®，500 V，5 A，1.4 Ω，TO-220F

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i •5A, 500V \n•RDS(ON) = 1.4 Ω @ VGS = 10V \n•Low gate charge ( typical 18nC) \n•Low Crss ( typical 15pF) \n•Fast switching \n•100% avalanche tested \n•Improved dv/dt capability;

ONSEMI

安森美半导体