800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

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Fairchild

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MOSFET N-CH 800V 3.3A TO-220F

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800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：889.91 Kbytes 页数：10 Pages

Fairchild

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N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.01814 Mbytes 页数：10 Pages

Fairchild

仙童半导体

N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.01814 Mbytes 页数：10 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.3A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET

文件：855.56 Kbytes 页数：10 Pages

Fairchild

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功率 MOSFET，N 沟道，QFET®，800 V，5.5 A，2.5 Ω，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •5.5A, 800V, RDS(on)= 2.5Ω（最大值）@VGS = 10 V, ID = 2.75A栅极电荷低（典型值：21nC)\n•低 Crss（典型值8pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

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N 沟道 QFET® MOSFET 800V, 3.3A, 1.95Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •3.3A, 800V, RDS(on)= 1.95Ω（最大值）@VGS = 10 V, ID = 1.65A栅极电荷低（典型值：31nC)\n•低 Crss（典型值14pF)\n•100% 经过雪崩击穿测试\n•100% 封装绝缘测试\n•100% package isolation tested;

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