200V N-Channel MOSFET

Features • 3.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 6.0 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

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200V N-Channel MOSFET

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200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：554.73 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体