60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=32.6A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.021Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Power MOSFET

文件：489.45 Kbytes 页数：4 Pages

FS

N-Channel Power MOSFET (60V/50A)

文件：261.22 Kbytes 页数：2 Pages

FS

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：228.11 Kbytes 页数：7 Pages

FS