首页 >FQPF45N03L>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FQPF45N03L | 30V LOGIC N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET GeneralDescription ThisdeviceemploysanewadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,45A) Features •RDS(on)=15mΩ@VGS=10V,ID=25A •RDS(on)=20mΩ@VGS=4.5V,ID=25A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo | HSMC 华昕 | HSMC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号：
FQPF45N03L
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
49500 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
F |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
F |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
VB |
TO-220F |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
F |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBSEMI |
19+ |
TO-220F |
29600 |
绝对原装现货,价格优势! |
询价 | ||
FAIRCHILD |
15+ |
TO-220F |
11560 |
全新原装,现货库存,长期供应 |
询价 |
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