N-Channel Enhancement-Mode MOSFET (25V, 45A)

Features • RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, ID=25A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoo

文件：54.66 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Enhancement-Mode MOSFET (25V, 45A)

HSMC

华昕

N-Channel 30-V (D-S) MOSFET

文件：1.01564 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：43.53 Kbytes 页数：3 Pages

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