丝印：D2PAK；Package：TO-263；N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes 页数：8 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：43.53 Kbytes 页数：3 Pages

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TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is suppl

文件：61.45 Kbytes 页数：8 Pages

PHI

PHI

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.01496 Mbytes 页数：8 Pages

VBSEMI

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