100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：631.02 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8.2A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.69 Kbytes 页数：2 Pages

ISC

无锡固电

100V P-Channel MOSFET

ONSEMI

安森美半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：624.66 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

文件：672.06 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel Enhancement Mode Power MOSFET

Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：623.74 Kbytes 页数：6 Pages

GOFORD

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