| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FQPF12N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：549.59 Kbytes 页数：8 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
FQPF12N60 | 600V N-Channel MOSFET 文件：1.43803 Mbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
FQP12N60C/FQPF12N60C Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：873.99 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：278.21 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
isc Silicon NPN Power Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：303.02 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance 文件：1.07433 Mbytes 页数：9 Pages | KERSEMI | KERSEMI | ||
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：804.99 Kbytes 页数：8 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：555.07 Kbytes 页数：8 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
600V N-Channel MOSFET 文件：1.12119 Mbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
600V N-Channel MOSFET 文件：1.43803 Mbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD |
详细参数
- 型号：
FQPF12N60
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FCS |
24+ |
TO 220 |
156085 |
明嘉莱只做原装正品现货 |
询价 | ||
onsemi(安森美) |
25+ |
TO-220F-3 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FSC |
2012 |
TO-220F |
3 |
全新原装正品现货 |
询价 | ||
HJ替代 |
2011+ |
TO220F |
50000 |
全新原装进口自己库存优势 |
询价 | ||
仙童 |
05+ |
TO-220F |
4000 |
原装进口 |
询价 | ||
FSC |
2015+ |
TO220F |
19898 |
专业代理原装现货,特价热卖! |
询价 | ||
FSC |
17+ |
TO-220 |
6200 |
询价 | |||
FAIRCHILD |
24+ |
TO-220F |
8866 |
询价 | |||
harris |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
Fairchi |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 |
相关规格书
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相关库存
更多- FQPF12N60C_G
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