isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.21 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：303.02 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

文件：1.07433 Mbytes 页数：9 Pages

KERSEMI

FQP12N60C/FQPF12N60C

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：873.99 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件：1.12119 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件：1.43803 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：804.99 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，600 V，12 A，650 mΩ，TO-220F

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用安森美半导体的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。 •12 A、600 V、RDS(on) = 650 mΩ（最大值）@ VGS = 10 V、ID = 6 A\n•低栅极电荷（典型值 48 nC)\n•低 Crss（典型值 21 pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体