500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：845.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：851.09 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V APPLICATIONS ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：396.47 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，QFET®，500 V，9 A，800 mΩ，TO-220

此类 N 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率因数校正、基于半桥拓扑结构的电子灯镇流器。 •9 A、500 V、RDS(on) = 800 mΩ（最大值）@ VGS = 10 V、ID = 4.5 A\n•低 Crss（典型值 24 pF）\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体