丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

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600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pul

文件：835.79 Kbytes 页数：10 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

文件：1.026619 Mbytes 页数：9 Pages

KERSEMI

600V N-Channel MOSFET

文件：1.02071 Mbytes 页数：10 Pages

FAIRCHILD

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600V N-Channel MOSFET

文件：1.19884 Mbytes 页数：10 Pages

FAIRCHILD

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丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

文件：940.45 Kbytes 页数：10 Pages

FAIRCHILD

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丝印：FQPF10N60CT；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

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功率 MOSFET，N 沟道，QFET®，600 V，9.5 A，730 mΩ，TO-220F

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、有源功率系数校正、基于半桥拓扑结构的电子灯镇流器。 •9.5 A、600 V、RDS(on) = 730 mΩ（最大值）@ VGS = 10 V、ID = 4.75 A\n•低栅极电荷（典型值 44 nC)\n•低 Crss（典型值 18 pF)\n•100% 经过雪崩击穿测试;

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安森美半导体