isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.48Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.23 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-Channel MOSFET

文件：718.05 Kbytes 页数：8 Pages

Fairchild

仙童半导体

400V N-Channel MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.22 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：709.76 Kbytes 页数：10 Pages

Fairchild

仙童半导体

FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：709.76 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：709.76 Kbytes 页数：10 Pages

Fairchild

仙童半导体

400V N-Channel MOSFET

文件：1.22216 Mbytes 页数：10 Pages

Fairchild

仙童半导体

N 沟道 QFET® MOSFET 400V，10.5A，530mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •10.5A, 400V, RDS(on)= 530mΩ（最大值）@VGS = 10 V, ID = 5.25A栅极电荷低（典型值：28nC)\n•低 Crss（典型值85pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

ONSEMI

安森美半导体