| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FQP6N15 | 150V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQP6N15 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
150VN-ChannelMOSFET Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSp | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerFieldEffectTransistorDPAKforSurfaceMount | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
LoadSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
LoadSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
HighSpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType HighSpeedSwitchingApplications AnalogSwitchingApplications •Smallpackage •LowONresistance:Ron=4.0Ω(max)(@VGS=4V) :Ron=7.0Ω(max)(@VGS=2.5V) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
6A,150VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
详细参数
- 型号：
FQP6N15
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
2015+ |
TO-220 |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-220 |
8866 |
询价 | |||
FAIRCHIL |
23+ |
TO-220 |
7600 |
全新原装现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Fairchild/ONSemiconducto |
2019+ |
TO-220-3 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220AB |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FAIRCHILD |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRCHILD |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
相关规格书
更多- FQP6N25
- FQP6N40C
- FQP6N40C_Q
- FQP6N40CF_06
- FQP6N40CNBEC003
- FQP6N45
- FQP6N50C
- FQP6N60C
- FQP6N70
- FQP6N80_JEDEC
- FQP6N90
- FQP6N90C_Q
- FQP70N08
- FQP7N10
- FQP7N20
- FQP7N30
- FQP7N60
- FQP7N80
- FQP7P06
- FQP85N06
- FQP8N25
- FQP8N60C_Q
- FQP8N80C_09
- FQP8P10
- FQP90N10V2
- FQP9N08
- FQP9N15
- FQP9N25C
- FQP9N25CTSTU
- FQP9N50
- FQP9N50C_F080
- FQP9N50C_Q
- FQP9P25
- FQPF 6N90C
- FQPF10N20C
- FQPF10N20T
- FQPF10N60C
- FQPF10N60CF
- FQPF10N60CYDTU
- FQPF11N40C
- FQPF11N40CT
- FQPF11N50CF
- FQPF12N20
- FQPF12N60
- FQPF12N60C_G
相关库存
更多- FQP6N40
- FQP6N40C_NBEC003
- FQP6N40CF
- FQP6N40CF_12
- FQP6N40L
- FQP6N50
- FQP6N60
- FQP6N60C_F080
- FQP6N80
- FQP6N80C
- FQP6N90C
- FQP6P25
- FQP70N10
- FQP7N10L
- FQP7N20L
- FQP7N40
- FQP7N65C
- FQP7N80C
- FQP7P20
- FQP85N06TU
- FQP8N60C
- FQP8N80C
- FQP8N90C
- FQP90N08
- FQP95N03L
- FQP9N08L
- FQP9N25
- FQP9N25C_Q
- FQP9N30
- FQP9N50C
- FQP9N50C_F105
- FQP9N90C
- FQPF 5N40
- FQPF10N20
- FQPF10N20L
- FQPF10N50CF
- FQPF10N60C_F105
- FQPF10N60CT
- FQPF11N40
- FQPF11N40C_08
- FQPF11N40T
- FQPF11P06
- FQPF12N20L
- FQPF12N60C
- FQPF12N60CT
