800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：785.26 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

ONSEMI

安森美半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：848.27 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.02 Kbytes 页数：2 Pages

ISC

无锡固电

6.6A,800V Heatsink Planar N-Channel Power MOSFET

General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Convert

文件：1.94995 Mbytes 页数：8 Pages

THINKISEMI

思祁半导体

功率 MOSFET，N 沟道，QFET®，800 V，7 A，1.9 Ω，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •6.6A, 800V, RDS(on)= 1.9Ω（最大值）@VGS = 10 V, ID = 3.3A栅极电荷低（典型值：27nC)\n•低 Crss（典型值10pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

ONSEMI

安森美半导体