700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：763.25 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

700V，N 沟道 QFET®

此类 N 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高能效开关模式电源。 •6.2 A, 700V, RDS(on) = 1.5Ω @VGS = 10 V \n•Low gate charge ( typical 30 nC) \n•Low Crss ( typical 15 pF) \n•Fast switching \n•100% avalanche tested \n•Improved dv/dt capability;

ONSEMI

安森美半导体

700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：560.31 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

BVDSS = 700 V RDS(on) = 1.8 W ID = 6 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 W (Typ.)

文件：630.85 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

Advanced Power MOSFET BVDSS= 700 V RDS(on) = 1.8 W ID= 4 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 700V Low RDS(ON) : 1.552 W

文件：637.39 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体