丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos=200v + p= 60A + Reson $0650 @Ves=10V

文件：998.02 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

200V N-Channel MOSFET

Features • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 5.0 nC) • Low Crss ( typical 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：704.04 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

文件：517.289 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：506.94 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体