200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

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FAIRCHILD

仙童半导体

MOSFET N-CH 200V 3.8A I2PAK

ONSEMI

安森美半导体

TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

文件：268.86 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

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STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.3 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

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STMICROELECTRONICS

意法半导体