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FQI3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3N60C

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF3N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXTA3N60P

PolarHVTMPowerMOSFET

IXYS

IXYS Corporation

IXTA3N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA3N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

详细参数

  • 型号:

    FQD3N60CTM_WS

  • 功能描述:

    MOSFET 600V 2.4A N-Channel Q-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
FCS
1822+
TO-2523L(DPAK)
9852
只做原装正品假一赔十为客户做到零风险!!
询价
安森美
21+
12588
原装现货,价格优势
询价
三年内
1983
只做原装正品
询价
FCS
18+
TO-2523L(DPAK)
41200
原装正品,现货特价
询价
ON
20+
SMD
11520
特价全新原装公司现货
询价
FAIRCHILDONSEMICONDUCTOR
24+
NA
2500
原装现货,专业配单专家
询价
NS/国半
23+
MSOP8
69820
终端可以免费供样,支持BOM配单!
询价
ON Semiconductor
2010+
N/A
7500
加我qq或微信,了解更多详细信息,体验一站式购物
询价
ON(安森美)
2447
TO-252-3
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
更多FQD3N60CTM_WS供应商 更新时间2025-7-23 17:06:00