500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

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Fairchild

仙童半导体

功率 MOSFET，P 沟道，QFET®，-500 V，-2.1 A，4.9 Ω，DPAK

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •-2.1 A, -500 V, RDS(on)= 4.9 Ω（最大值）（VGS = 10 V 且 ID = -1.05 A 时）栅极电荷低（典型值：18nC）\n•低 Crss（典型值9.5pF）\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

500V P-Channel MOSFET

这些P沟道增强模式功率场效应晶体管采用飞兆专有的平面条形DMOS技术生产。这一先进技术是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合基于互补半桥的电子灯镇流器。 • - 2.1A，-500V，RDS(on) = 4.9Ω @VGS = -10 V\n•低栅极电荷（典型值18 nC）\n•低Crss（典型值9.5pF）\n•快速开关\n•100%经过雪崩测试\n•可提高dv/dt处理能力\n•符合AEC Q101\n•符合RoHS标准;

ONSEMI

安森美半导体

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.58 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V P-Channel MOSFET

文件：651.06 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：640.4 Kbytes 页数：8 Pages

Fairchild

仙童半导体