N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：1.34898 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：FQD19N10；Package：TO-252；100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

文件：1.38344 Mbytes 页数：5 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.63316 Mbytes 页数：4 Pages

BYCHIP

百域芯

D-PAK Tape and Reel Data D-PAK Packaging Configuration: Figure 1.0

文件：406.75 Kbytes 页数：2 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.41412 Mbytes 页数：4 Pages

BYCHIP

百域芯

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：575.39 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体