首页 >FQD2N60CTM_WS>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
2Amps,600VoltsN-CHANNELMOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | |||
TO-251Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | |||
N-CHANNELMOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
FastSwitching •FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |
详细参数
- 型号:
FQD2N60CTM_WS
- 功能描述:
MOSFET 600V 1.9A NCH MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAI |
23+ |
540 |
原装现货,欢迎咨询 |
询价 | |||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON |
20+ |
SMD |
11520 |
特价全新原装公司现货 |
询价 | ||
Fairchild |
2022+ |
2500 |
全新原装 货期两周 |
询价 | |||
Fairchild |
1930+ |
N/A |
2133 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
ON |
1809+ |
TO-252 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
Fairchild |
22+ |
NA |
2133 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
询价 |
相关规格书
更多- FQD2N80TM
- FQD2P40TM
- FQD-3F
- FQD3N60CTM_WS
- FQD3P50TM
- FQD-4F
- FQD4N20TM
- FQD4P25TM_WS
- FQD4P40TM_AM002
- FQD5N15TM
- FQD5N60CTM
- FQD5N60CTM_WS
- FQD5P20TM
- FQD-6F
- FQD6N25TM
- FQD6N40CTM_NBEA002
- FQD-7I
- FQD7N20LTM
- FQD7P06TM
- FQD7P20TM-CUTTAPE
- FQD8P10TM_F085
- FQD9N25TM_F080
- FQH8N100C
- FQI27N25TU
- FQI4N80TU
- FQI50N06TU
- FQI7N60TU
- FQI8N60CTU
- FQL40N50F
- FQN1N60CTA
- FQP10N20C
- FQP11P06
- FQP12P10
- FQP13N06L
- FQP13N10L
- FQP13N50C_G
- FQP15P12
- FQP16N25C
- FQP17P06
- FQP19N20
- FQP20N06
- FQP22N30
- FQP27N25
- FQP27P06_SW82127
- FQP2N80
相关库存
更多- FQD2N90TM
- FQD30N06TM
- FQD-3N
- FQD3P20TF
- FQD3P50TM_F085
- FQD-4I
- FQD4N25TM_WS
- FQD4P40TM
- FQD-5F
- FQD5N20LTM
- FQD5N60CTM/BKN
- FQD5P10TM
- FQD5P20TM/BKN
- FQD-6I
- FQD6N40CTM
- FQD6N50CTM
- FQD7N10LTM
- FQD7N30TM
- FQD7P20TM
- FQD8P10TM
- FQD9N25TM
- FQH44N10_F133
- FQI13N50CTU
- FQI27N25TU_F085
- FQI4N90TU
- FQI5N60CTU
- FQI7N80TU
- FQL40N50
- FQN1N50CTA
- FQNL2N50BTA
- FQP11N40C
- FQP12N60C
- FQP12P20
- FQP13N10
- FQP13N50
- FQP14N30
- FQP16N25
- FQP17N40
- FQP17P10
- FQP19N20C
- FQP20N06L
- FQP24N08
- FQP27P06
- FQP2N60C
- FQP2N90