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FQI19N10

100V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI19N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

19N10

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10V

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFET짰MOSFET100V,15.6A,100m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

UMWUMW

友台友台半导体

FQD19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FQI19N10

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    100V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
仙童
05+
TO-262
2500
原装进口
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
21+ROHS
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
isc
2024
I2PAK/TO-262
14000
国产品牌isc,可替代原装
询价
FSC
2022+
TO-262
5000
只做原装公司现货
询价
FSC
23+
TO-262
8650
受权代理!全新原装现货特价热卖!
询价
23+
N/A
59810
正品授权货源可靠
询价
FSC
21+
TO-262
1222
原装现货假一赔十
询价
FSC
22+
TO-262
32350
原装正品 假一罚十 公司现货
询价
FSC
21+
TO-262
50000
全新原装正品现货,支持订货
询价
更多FQI19N10供应商 更新时间2024-4-30 10:48:00