FQP11N40C资料使用说明书供应商报价-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP11N40C_08	文件：1.22216 Mbytes Page：10 Pages	400V N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
11N40	文件：194.07 Kbytes Page：6 Pages	400VN-CHANNELMOSFET DESCRIPTION The11N40usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES RDS(ON)=0.52Ω@VGS=10V Ultr	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
11N40	文件：244.91 Kbytes Page：6 Pages	11.4A,400VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C/FQPF11N40CN-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FIR11N40FG	文件：2.39982 Mbytes Page：8 Pages	400VN-ChannelMOSFET-T	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司
FQA11N40	文件：363.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQA11N40	文件：703.95 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQAF11N40	文件：698.41 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQAF11N40	文件：421.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=8.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQB11N40	文件：333.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQB11N40	文件：566.92 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB11N40C	文件：622.47 Kbytes Page：9 Pages	400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB11N40CTM	文件：977.97 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB11N40TM	文件：572.4 Kbytes Page：9 Pages	400VN-ChannelMOSFET	DIODESDiodes Incorporated 达尔科技
FQI11N40	文件：566.92 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI11N40C	文件：622.47 Kbytes Page：9 Pages	400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP11N40	文件：708.64 Kbytes Page：8 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP11N40	文件：302.34 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.48Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司

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详细参数

型号：
FQP11N40C
功能描述：
MOSFET 400V N-Channel Advance Q-FET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	FQP11N40C	onsemi	23+	TO-220-3	30000	晶体管-分立半导体产品-原装正品	询价
深圳市航润创能电子集团有限公司	FQP11N40C	ON/安森美	21+	NA	20000	只做原装,假一罚十	询价
深圳市芯祺盛科技有限公司	FQP11N40C	ON/安森美	2105+	TO-220	10053		询价
深圳市高捷芯城科技有限公司	FQP11N40C	ON/安森美	23+	TO220	9048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市得捷芯城科技有限公司	FQP11N40C	ON/安森美	23+	TO220	13316	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市勤思达科技有限公司	FQP11N40C	FAIRCHIL	2015+	TO-220	12500	全新原装,现货库存长期供应	询价
深圳市粤科源兴科技有限公司	FQP11N40C	FSC	13+	TO-220	3008	原装分销	询价
深圳市特顺芯科技有限公司	FQP11N40C	FAIRCHILD	08+(pbfree)	TO-220	8866		询价
深圳市星佑电子有限公司	FQP11N40C	仙童	06+	TO-220	5000	原装库存	询价
深圳市博浩通科技有限公司	FQP11N40C	FAIRCHIL	23+	TO-220	7600	全新原装现货	询价

更多FQP11N40C供应商更新时间2024-4-23 14:14:00

详细参数

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